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CMOS process utilizing disposable silicon nitride spacers for ma

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS process with optimized PMOS and NMOS transistor devices

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS processing employing removable sidewall spacers for indepen

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS processing employing separate spacers for independently opt

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS processing employing zero degree halo implant for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Cmos processs with low thermal budget

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS semiconductor device comprising graded junctions with reduc

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS semiconductor device containing N-channel transistor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS semiconductor devices and method of formation

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS SiGe channel pFET and Si channel nFET devices with...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS silicide metal gate integration

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS structure including differential channel stressing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS structure with maximized polysilicon gate activation...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS structure with non-epitaxial raised source/drain and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS thin film transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
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CMOS transistor and method for manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS transistor and method of fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
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CMOS transistor and method of manufacture thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS transistor using high stress liner layer

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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CMOS transistor with amorphous silicon elevated source-drain...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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