CMOS transistor and method of fabricating the same

Details CMOS transistor and method of fabricating the same CMOS transistor and method of fabricating the same

1997-05-21

1999-08-24

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, 438152, 438161, 438199, H01L 2100

Patent

active

059435615

ABSTRACT:
A CMOS device includes a first conductivity type semiconductor substrate having an active region, the active region including two second conductivity type of impurity regions and a first channel region between the two second conductivity type impurity regions, a field insulation region on the semiconductor substrate for electrical isolation of the active region from other adjacent active regions, a second conductivity type semiconductor layer on the field insulation layer, the semiconductor layer including two first conductivity type impurity regions and a second channel region between the two first conductivity type impurity regions, and a gate electrode over the first channel region in the active region and the second channel region in the semiconductor layer.

REFERENCES:
patent: 4651408 (1987-03-01), MacElwee et al.
patent: 4654121 (1987-03-01), Miller et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 5334861 (1994-08-01), Pfiester et al.

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