CMOS SiGe channel pFET and Si channel nFET devices with...

Details CMOS SiGe channel pFET and Si channel nFET devices with... CMOS SiGe channel pFET and Si channel nFET devices with...

2009-03-30

2011-11-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S478000, C257S204000, C257S351000, C257S371000, C257S388000, C257S412000, C257SE27062

Reexamination Certificate

active

08053301

ABSTRACT:
Silicon germanium (SiGe) is epitaxially grown on a silicon channel above nFET and pFET regions of a substrate. SiGe is removed above the nFET regions. A device includes a silicon channel above the nFET regions and a SiGe channel above the pFET regions.

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patent: 7838908 (2010-11-01), Kwon et al.
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patent: 2003/0219938 (2003-11-01), Rhee et al.
patent: 2006/0258073 (2006-11-01), Greene et al.
patent: 2007/0161248 (2007-07-01), Christenson et al.
patent: 2008/0203498 (2008-08-01), Takayanagi
patent: 2009/0191711 (2009-07-01), Rui et al.

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