CMOS transistor and method of manufacture thereof

Details CMOS transistor and method of manufacture thereof CMOS transistor and method of manufacture thereof

2004-12-06

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S275000, C438S287000, C438S289000, C257SE21632, C257SE21636

Reexamination Certificate

active

07344934

ABSTRACT:
A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. An aluminum-based material is used as a gate dielectric material of a PMOS device, and a hafnium-based material is used as a gate dielectric material of an NMOS device. A thin layer of silicon a few monolayers or a sub-monolayer thick is formed over the gate dielectric materials, before forming the gates. The thin layer of silicon bonds with the gate dielectric material and pins the work function of the transistors. A gate material that may comprise a metal in one embodiment is deposited over the thin layer of silicon. A CMOS device having a symmetric Vtfor the PMOS and NMOS FETs is formed.

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