CMOS thin film transistor

Details CMOS thin film transistor CMOS thin film transistor

2007-05-01

2007-05-01

Malsawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

10978376

ABSTRACT:
A CMOS thin film transistor having a semiconductor layer formed in a zigzag form on an insulating substrate, and a PMOS transistor region and an NMOS transistor region and a gate electrode having at least one slot crossing the semiconductor layer, wherein the semiconductor layer has an MILC surface existing on the PMOS transistor region and the NMOS transistor region, and the method of manufacturing the same, whereby a manufacturing process of the CMOS TFT is simple and the leakage current is decreased.

REFERENCES:
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 6034748 (2000-03-01), Furuta
patent: 6103558 (2000-08-01), Yamanaka et al.
patent: 6207481 (2001-03-01), Yi et al.
patent: 6399959 (2002-06-01), Chang et al.
patent: 6475835 (2002-11-01), Hu et al.
patent: 6596573 (2003-07-01), Lee et al.
patent: 6703289 (2004-03-01), Muramatsu et al.
patent: 6815267 (2004-11-01), So
patent: 2001/0000627 (2001-05-01), Hayakawa et al.
patent: 2001/0018240 (2001-08-01), Joo et al.
patent: 2001/0034088 (2001-10-01), Nakamura et al.
patent: 2001/0045559 (2001-11-01), Yamazaki et al.
patent: 2001/0074548 (2002-06-01), Lee et al.
patent: 2002/0074548 (2002-06-01), Lee et al.
patent: 2002/0137267 (2002-09-01), Joo et al.
patent: 2002/0146869 (2002-10-01), So
patent: 2003/0111691 (2003-06-01), So
patent: 1198596 (1998-11-01), None
patent: 1053292 (2000-06-01), None
patent: 1 052 700 (2000-11-01), None
patent: 1 054 452 (2000-11-01), None
patent: 06-244205 (1994-09-01), None
patent: 09-293879 (1997-11-01), None
patent: 10-135137 (1998-05-01), None
patent: 10-154816 (1998-09-01), None
patent: 10-284734 (1998-10-01), None
patent: 2001-7335 (2001-01-01), None
patent: 2001-144027 (2001-05-01), None
U.S. Appl. No. 10/298,559, filed Nov. 19, 2002, Woo-Young So, Samsung SDI Co., Ltd.
U.S. Appl. No. 10/890,999, filed Jul. 15, 2004, Woo-Young So, Samsung SDI Co., Ltd.
U.S. Appl. No. 10/237,875, filed Sep. 10, 2002, Woo-Young So, Samsung SDI Co., Ltd.

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