CMOS transistor and method for manufacturing the same

Details CMOS transistor and method for manufacturing the same CMOS transistor and method for manufacturing the same

2011-04-05

2011-04-05

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C438S270000, C257SE21634, C257SE21635, C257SE21643

Reexamination Certificate

active

07919376

ABSTRACT:
A method for manufacturing a CMOS transistor includes preparing a silicon substrate provided with a first buried layer, a second buried layer and a body, vertically forming device-isolation films inside the body, forming a first-type well inside the body arranged on the first buried layer, and vertically forming a first source and drain region inside the first-type well, forming a second-type well inside the body arranged on the second buried layer, and vertically forming a second source and drain region inside the second-type well, and vertically forming a recessed gate between the first-type well and the second-type well.

REFERENCES:
patent: 5378914 (1995-01-01), Ohzu et al.
patent: 5670803 (1997-09-01), Beilstein et al.
patent: 2003/0075758 (2003-04-01), Sundaresan et al.

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