Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-29
1998-06-16
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438307, 438595, H01L 21336
Patent
active
057669910
ABSTRACT:
A process sequence for fabricating CMOS devices of the LDD type includes forming spacers along the sides of gates defined on p- and n-regions of the device. In a two-mask sequence, a thin layer of silicon dioxide is utilized to protect the n-region spacers while the p-region spacers are etched away. In one-mask variants of this sequence, a thin layer of silicon oxynitride is utilized to prevent oxide growth over one type of region while an oxide implant mask is grown on the surface of the other type of region and on exposed surfaces of the gates overlying the other type of region.
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Spain Norman N.
U.S. Philips Corporation
Wilczewski Mary
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