Asymmetrical MOSFET with gate pattern after source/drain formati
Asymmetrical p-channel transistor formed by nitrided oxide and l
Asymmetrical P-channel transistor having a boron migration barri
Asymmetrical transistor formed from a gate conductor of unequal
Atomic layer deposited nanolaminates of HfO 2 /ZrO 2 films...
Atomic layer deposited nanolaminates of HfO2/ZrO2 films as...
Atomic layer deposited ZrAl x O y dielectric layers...
Atomic layer deposition of hafnium lanthanum oxides
Atomic layer deposition of interpoly oxides in a...
Atomic layer deposition of Zr 3 N 4 /ZrO 2 films as gate...
Atomic layer deposition of Zr x Hf y Sn 1-x-y O 2 films...
Atomic layer deposition of Zr x Hf y Sn 1-x-y O 2 films...
Atomic layer deposition processes for non-volatile memory...
Atomic layer deposition processes for non-volatile memory...
Atomic layer-deposited LaAlO3 films for gate dielectrics
Avoiding abnormal capacitor formation by an offline edge-bead ri
Avoiding field oxide gouging in shallow trench isolation...
Avoiding plasma charging in integrated circuits
Back gate FinFET SRAM
Back-biased MOS device fabrication method