Atomic layer-deposited LaAlO3 films for gate dielectrics

Details Atomic layer-deposited LaAlO3 films for gate dielectrics Atomic layer-deposited LaAlO3 films for gate dielectrics

2006-05-16

2006-05-16

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S643000, C438S003000

Reexamination Certificate

active

07045430

ABSTRACT:
A dielectric film containing LaAlO3and method of fabricating a dielectric film contained LaAlO3produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO3gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd)3(thd=2,2,6,6-tetramethyl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminum, Al(CH3)3, or DMEAA, an adduct of alane (AlH3) and dimethylethylamine [N(CH3)2(C2H5)], with distilled water vapor.

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