Avoiding field oxide gouging in shallow trench isolation...

Details Avoiding field oxide gouging in shallow trench isolation... Avoiding field oxide gouging in shallow trench isolation...

2007-09-04

2007-09-04

Mai, Anh Duy (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C257SE21546

Reexamination Certificate

active

10799413

ABSTRACT:
A method and device for avoiding oxide gouging in shallow trench isolation (STI) regions of a semiconductor device. A trench may be etched in an STI region and filled with insulating material. An anti-reflective coating (ARC) layer may be deposited over the STI region and extend beyond the boundaries of the STI region. A portion of the ARC layer may be etched leaving a remaining portion of the ARC layer over the STI region and extending beyond the boundaries of the STI region. A protective cap may be deposited to cover the remaining portion of the ARC layer as well as the insulating material. The protective cap may be etched back to expose the ARC layer. However, the protective cap still covers and protects the insulating material. By providing a protective cap that covers the insulating material, gouging of the insulating material in STI regions may be avoided.

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