Atomic layer deposited nanolaminates of HfO2/ZrO2 films as...

Details Atomic layer deposited nanolaminates of HfO2/ZrO2 films as... Atomic layer deposited nanolaminates of HfO2/ZrO2 films as...

2005-07-26

2005-07-26

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S785000

Reexamination Certificate

active

06921702

ABSTRACT:
A dielectric film containing HfO2/ZrO2nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2using a HfI4precursor followed by the formation of ZrO2on the HfO2layer. The HfO2layer thickness is controlled by repeating for a number of cycles a sequence including pulsing the HfI4precursor into a reaction chamber, pulsing a purging gas into the reaction chamber, pulsing a first oxygen containing precursor into the reaction chamber, and pulsing the purging gas until the desired thickness is formed. These gate dielectrics containing HfO2/ZrO2nanolaminates are thermodynamically stable such that the HfO2/ZrO2nanolaminates will have minimal reactions with a silicon substrate or other structures during processing.

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