Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-08-10
2000-11-21
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
H01L 218242
Patent
active
061502154
ABSTRACT:
A method for ensuring no capacitor peeling at the edge of a wafer in the fabrication of dynamic random access memory (DRAM) is disclosed. The method includes first providing a semiconductor substrate having a semiconductor structure formed thereon. A dielectric layer is then formed overlying the semiconductor structure, and patterned for defining a contact window. Followed by, the deposition of a silicon layer over the dielectric layer that fills up the contact window. Consequentially, a photoresist layer is coated overlying the silicon layer, where it will be rinsed twice by a combination of an online EBR (and/or a WEE) and an offline EBR at a distance inwardly away from the edge of the wafer in process for removing a portion of the photoresist to avoid abnormal capacitor formation in later stages. Then, a photolithography process is carried out against the photoresist layer to form a photoresist mask. Finally, the silicon layer is etched where it is not covered by the photoresist mask to form a lower capacitor electrode. The photoresist mask is stripped as to conclude the present invention.
REFERENCES:
patent: 5783482 (1998-07-01), Lee et al.
Hsia Da-Wen
Lin Kuo-Chi
Bowers Charles
Thompson Craig
United Microelectronics Corp.
LandOfFree
Avoiding abnormal capacitor formation by an offline edge-bead ri does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Avoiding abnormal capacitor formation by an offline edge-bead ri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avoiding abnormal capacitor formation by an offline edge-bead ri will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256069