Avoiding plasma charging in integrated circuits

Details Avoiding plasma charging in integrated circuits Avoiding plasma charging in integrated circuits

2008-03-06

2010-12-07

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S690000, C438S706000, C257SE29014

Reexamination Certificate

active

07846800

ABSTRACT:
A circuit having a circuit control terminal, a primary circuit and a protection circuit is provided. The primary circuit includes a primary control terminal and a primary gate oxide of a thickness T1. The primary control terminal is coupled to the circuit control terminal. The protection circuit having a protection control terminal is coupled to the primary circuit. The protection circuit includes a protection gate oxide of a second thickness T2which is less than T1. The protection gate oxide reduces plasma induced damage in the primary circuit.

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Pei-Jer Tzeng et al., Plasma Charging Damage on MOS Devices with Gate Insulator of High-Dielectric Constant Material, IEEE Electron Device Letters, Nov. 2001, pp. 527-529, vol. 22, Issue 11.

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