Atomic layer deposited nanolaminates of HfO 2 /ZrO 2 films...

Details Atomic layer deposited nanolaminates of HfO 2 /ZrO 2 films... Atomic layer deposited nanolaminates of HfO 2 /ZrO 2 films...

2007-01-30

2007-01-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S261000, C438S591000, C438S763000, C438S785000, C257SE21192, C257SE21290, C977S811000, C977S843000, C977S891000

Reexamination Certificate

active

11148505

ABSTRACT:
A dielectric film containing HfO2/ZrO2nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2using a HfI4precursor followed by the formation of ZrO2on the HfO2layer.

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