Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000, C438S216000, C438S264000, C438S785000
Reexamination Certificate
active
07122415
ABSTRACT:
Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.
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Chan Vei-Han
Chen Ching-Hwa
Dong Zhong
Jang Chuck
MacPherson Kwok & Chen & Heid LLP
Pham Hoai
ProMOS Technologies Inc.
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