Back-biased MOS device fabrication method

Details Back-biased MOS device fabrication method Back-biased MOS device fabrication method

2005-01-04

2005-01-04

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S228000, C438S526000

Reexamination Certificate

active

06838328

ABSTRACT:
A plurality of p-wells and n-wells are formed in a front side of a bulk material, and a plurality of n layers and p layers are alternately formed within the bulk material between a back side of the bulk material and the plurality of n-wells and p-wells. The plurality of n layers are electrically isolated from one another and respectively route different potentials to selected ones of the plurality of n-wells, and likewise, the plurality of p layers are electrically isolated from one another and respectively route different potentials to selected ones of the plurality of p-wells.

REFERENCES:
patent: 4910563 (1990-03-01), Tuska et al.
patent: 4980744 (1990-12-01), Watanabe et al.
patent: 5138420 (1992-08-01), Komori et al.
patent: 5286991 (1994-02-01), Hui et al.
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5508549 (1996-04-01), Watanabe et al.
patent: 5581103 (1996-12-01), Mizukami
patent: 5899714 (1999-05-01), Farrenkopf et al.
patent: 6064098 (2000-05-01), Honeycutt et al.
patent: 6218708 (2001-04-01), Burr
patent: 6245604 (2001-06-01), Violette et al.
patent: 5-6962 (1993-01-01), None

Affiliated with

Also associated with

Rating

Back-biased MOS device fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Back-biased MOS device fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back-biased MOS device fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3436623