Atomic layer deposited ZrAl x O y dielectric layers...

Details Atomic layer deposited ZrAl x O y dielectric layers... Atomic layer deposited ZrAl x O y dielectric layers...

2006-11-14

2006-11-14

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S396000, C438S581000, C438S778000, C438S785000

Reexamination Certificate

active

07135369

ABSTRACT:
An atomic layer deposited ZrAlxOydielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-containing precursor onto a substrate, pulsing a first oxygen-containing precursor, pulsing an aluminum-containing precursor, and pulsing a second oxygen-containing precursor to form ZrAlxOyby atomic layer deposition provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide and with a relatively low leakage current. Dielectric layers containing atomic layer deposited ZrAlxOyare thermodynamically stable such that the ZrAlxOywill have minimal reactions with a silicon substrate or other structures during processing.

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