Atomic layer deposition of hafnium lanthanum oxides

Details Atomic layer deposition of hafnium lanthanum oxides Atomic layer deposition of hafnium lanthanum oxides

2009-04-27

2011-12-06

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S643000, C438S003000

Reexamination Certificate

active

08071452

ABSTRACT:
There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 6013553 (2000-01-01), Wallace
patent: 6287965 (2001-09-01), Kang et al.
patent: 6342427 (2002-01-01), Choi et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6734090 (2004-05-01), Agarwala et al.
patent: 6820570 (2004-11-01), Kilpela et al.
patent: 6824665 (2004-11-01), Shelnut et al.
patent: 6858547 (2005-02-01), Metzner
patent: 6875677 (2005-04-01), Conley, Jr. et al.
patent: 6930059 (2005-08-01), Conley, Jr. et al.
patent: 7045430 (2006-05-01), Ahn et al.
patent: 7053009 (2006-05-01), Conley, Jr. et al.
patent: 7071051 (2006-07-01), Jeon et al.
patent: 7129165 (2006-10-01), Basol et al.
patent: 7132360 (2006-11-01), Schaeffer et al.
patent: 7135421 (2006-11-01), Ahn et al.
patent: 7147766 (2006-12-01), Uzoh et al.
patent: 7172497 (2007-02-01), Basol et al.
patent: 7192824 (2007-03-01), Ahn et al.
patent: 7192892 (2007-03-01), Ahn et al.
patent: 7205247 (2007-04-01), Lee et al.
patent: 7235501 (2007-06-01), Ahn et al.
patent: 7312494 (2007-12-01), Ahn et al.
patent: 7393736 (2008-07-01), Ahn et al.
patent: 7402534 (2008-07-01), Mahajani
patent: 7405166 (2008-07-01), Liang et al.
patent: 7405454 (2008-07-01), Ahn et al.
patent: 7414281 (2008-08-01), Fastow
patent: 2002/0001974 (2002-01-01), Chan
patent: 2002/0064592 (2002-05-01), Datta et al.
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0168627 (2004-09-01), Conley et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2005/0023624 (2005-02-01), Ahn et al.
patent: 2005/0070123 (2005-03-01), Hirano
patent: 2005/0110069 (2005-05-01), Kil et al.
patent: 2005/0214458 (2005-09-01), Meiere
patent: 2005/0218462 (2005-10-01), Ahn et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0013946 (2006-01-01), Park et al.
patent: 2006/0019033 (2006-01-01), Muthukrishnan et al.
patent: 2006/0051925 (2006-03-01), Ahn et al.
patent: 2006/0060930 (2006-03-01), Metz et al.
patent: 2006/0062910 (2006-03-01), Meiere
patent: 2006/0113675 (2006-06-01), Chang et al.
patent: 2006/0128168 (2006-06-01), Ahn et al.
patent: 2006/0148180 (2006-07-01), Ahn et al.
patent: 2006/0193979 (2006-08-01), Meiere et al.
patent: 2006/0208215 (2006-09-01), Metzner et al.
patent: 2006/0223301 (2006-10-01), Vanhaelemeersch et al.
patent: 2006/0228888 (2006-10-01), Lee et al.
patent: 2006/0257563 (2006-11-01), Doh et al.
patent: 2006/0258078 (2006-11-01), Lee et al.
patent: 2006/0266289 (2006-11-01), Verghese et al.
patent: 2007/0031599 (2007-02-01), Gschwandtner et al.
patent: 2007/0037412 (2007-02-01), Dip et al.
patent: 2007/0059948 (2007-03-01), Metzner et al.
patent: 2007/0065578 (2007-03-01), McDougall
patent: 2007/0066010 (2007-03-01), Ando
patent: 2007/0134942 (2007-06-01), Ahn et al.
patent: 2007/0232501 (2007-10-01), Tonomura
patent: 2007/0252244 (2007-11-01), Srividya et al.
patent: 2008/0054332 (2008-03-01), Kim et al.
patent: 2008/0057659 (2008-03-01), Forbes et al.
patent: 2008/0124908 (2008-05-01), Forbes et al.
patent: 2008/0176375 (2008-07-01), Erben et al.
patent: 2008/0224240 (2008-09-01), Ahn et al.
patent: 2008/0233288 (2008-09-01), Clark
patent: 2008/0261413 (2008-10-01), Mahajani
patent: 2008/0282970 (2008-11-01), Heys et al.
patent: 2009/0011608 (2009-01-01), Nabatame
Chang et al.; Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric; IEEE Electron Device Letters; Feb. 2009; 133-135; vol. 30, No. 2; IEEE Electron Device Society.
USPTO; Office Action dated Feb. 15, 2011 in U.S. Appl. No. 12/118,596.
PCT; International Search report and Written Opinion dated Nov. 12, 2010 in Application No. PCT/US2010/030126.
PCT; International Search report and Written Opinion dated Jan. 12, 2011 in Application No. PCT/US2010/045368.
Maeng et al. Electrical properties of atomic layer disposition Hf02 and Hf0xNy on Si substrates with various crystal orientations, Journal of the Electrochemical Society, Apr. 2008, p. H267-H271, vol. 155, No. 4, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea.

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