LandOfFree - US Patents - Listing for Metal treatment,Barrier layer stock material, p-n type

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Dual use of epitaxy seed crystal as tube input window and cathod

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

Dual-masked field isolation

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Economical silicon-on-silicon hybrid wafer assembly

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...

Electrically insulated silicon structure and producing method th

Metal treatment – Barrier layer stock material – p-n type – Having at least three contiguous layers of semiconductive...

Epitaxial front seal for a wafer

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Epitaxial metal-insulator-metal-semiconductor structures

Metal treatment – Barrier layer stock material – p-n type

Epitaxial semiconductor substrate, manufacturing method...

Metal treatment – Barrier layer stock material – p-n type

Epitaxial silicon starting material

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy

Epitaxial silicon wafer free from autodoping and backside...

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Epitaxial substrate for high-intensity led, and method of manufa

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...

Epitaxial tunnels from intersecting growth planes

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Epitaxial wafer for use in production of light emitting diode

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Epitaxial wafer having a gallium nitride epitaxial layer...

Metal treatment – Barrier layer stock material – p-n type

Epitaxial wafer of gallium arsenide phosphide

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...

Epitaxially grown compound-semiconductor crystal

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

Epitaxy for growing compound semiconductors and an InP substrate

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

Etch control seal for dissolved wafer micromachining process

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

Etch control seal for dissolved wafer process

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...

Fabrication of defect free silicon on an insulating substrate