Dual-masked field isolation

Details Dual-masked field isolation Dual-masked field isolation

1997-11-19

2000-08-15

Fourson, George

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

257509, 257510, H01L 2912, H01L 21762

Patent

active

061030201

ABSTRACT:
A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular, by forming field oxide islands. The superposition of field isolation configurations define the desired active areas. A presently preferred dual-mask process may be carried out using a single masking stack, or more preferably using a masking stack for each isolation mask. The present isolation process further allows isolation features to be optimized for a variety of isolation requirements on the same integrated circuit.

REFERENCES:
patent: 4551910 (1985-11-01), Patterson
patent: 4959325 (1990-09-01), Lee et al.
patent: 5057449 (1991-10-01), Lowrey et al.
patent: 5128274 (1992-07-01), Yabu et al.
patent: 5252504 (1993-10-01), Lowrey et al.
patent: 5260229 (1993-11-01), Hodges et al.
patent: 5358894 (1994-10-01), Fazan et al.
patent: 5369052 (1994-11-01), Kenkare et al.
patent: 5463236 (1995-10-01), Sakao
patent: 5466632 (1995-11-01), Lur et al.
patent: 5468675 (1995-11-01), Kaigawa
patent: 5472906 (1995-12-01), Shimizu et al.
patent: 5747359 (1998-05-01), Yuan et al.
patent: 5854500 (1998-12-01), Krautschneider
patent: 5929477 (1999-07-01), McAllister et al.
J.W. Lutze, A.H. Perera, and J.P. Krusius; Field Oxide Thinning in Poly Buffer LOCOS Isolation with Active Area Spacings to 0.1; Jun. 1990; vol. 137, No. 6.

Affiliated with

Also associated with

Rating

Dual-masked field isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual-masked field isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual-masked field isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2002458