Epitaxy for growing compound semiconductors and an InP substrate

Details Epitaxy for growing compound semiconductors and an InP substrate Epitaxy for growing compound semiconductors and an InP substrate

1995-09-07

1997-07-15

Breneman, R. Bruce

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

148 335, 148 336, 437105, 437107, 437133, H01L 2912

Patent

active

056479174

ABSTRACT:
When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.

REFERENCES:
patent: 5011550 (1991-04-01), Konushi et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5411915 (1995-05-01), Hamada et al.
patent: 5424243 (1995-06-01), Takashi

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