Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1989-01-19
1990-02-20
Hearn, Brian E.
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
148DIG72, 148DIG101, 148DIG108, 148DIG110, 148 335, 156610, 357 17, 437 86, 437117, 437127, 437133, 437905, 437974, H01L 2120
Patent
active
049023560
ABSTRACT:
An epitaxial layer having a double-hetero structure is forming using an MOCVD process or an MBE process, and an epitaxial substrate is formed using an LPE process, thereby forming a substrate which exploits the distinguishing features of both processes. Since the MOCVD process or MBE process exhibits mixed-crystal ratio and film thickness controllability, excellent reproducibility and uniformity are obtained when forming the double-hetero structure on a compound semiconductor substrate. Since the growth process takes place under thermal non-equilibrium, the amount of impurity doping is raised to more than 10.sup.19 cm.sup.3. This is advantageous in terms of forming an electrode contact layer. With the LPE process, the material dissolved in the melt is grown epitaxially on the substrate by slow cooling, and the rate of growth is high. This process is suitable for forming the substrate after removal of the compound semiconductor substrate. By virtue of this liquid phase epitaxy, an oxide film preventing layer is removed by raising the degree of unsaturation of the melt, the epitaxial layer is grown in a short period of time, and a high-quality, highly uniform epitaxial substrate can be quickly manufactured. It is also possible to reduce cost.
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Gotoh Hideki
Noguchi Masahiro
Shimoyama Kenji
Bunch William
Hearn Brian E.
Mitsubishi Kasei Corporation
Mitsubishi Monsanto Chemical Company
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