Epitaxial tunnels from intersecting growth planes

Details Epitaxial tunnels from intersecting growth planes Epitaxial tunnels from intersecting growth planes

1979-06-13

1980-07-01

Rutledge, L. Dewayne

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148 333, 350 961, 350 9611, 357 20, 357 55, 357 56, 357 60, 357 88, H01L 2904, H01L 2906

Patent

active

042104700

ABSTRACT:
Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.

REFERENCES:
patent: 3403439 (1968-10-01), Bailey
patent: 3621346 (1971-11-01), Chang
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3855690 (1974-12-01), Kim et al.
patent: 3884733 (1975-05-01), Bean
patent: 3998672 (1976-12-01), Miyoshi et al.
patent: 4099305 (1978-07-01), Cho et al.
patent: 4141765 (1979-02-01), Druminski et al.
Von Muench, W., "Producing Semiconductor . . . Lateral Overgrowth" I.B.M. _Tech. Discl. Bull., vol. 10, No. 10, Mar. 1968, pp. 1469-1470.
Tausch et al., "Novel Crystal Growth . . . Overgrowth . . . SiO.sub.2 " J. Electrochem. Soc., vol. 112, No. 7, Jul. 1965, pp. 706-709.
Iida et al., "Morphological Studies . . . on GaAs", J. Crystal Growth, vol. 13/14 (1972) pp. 336-341.

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