Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1979-07-06
1981-02-24
Dean, R.
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
29569L, 148 33, 148 335, 148175, 357 16, 357 17, 357 63, H01L 2912, H01L 2120
Patent
active
042525764
ABSTRACT:
An epitaxial wafer of GaAs.sub.1-x P.sub.x has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs.sub.1-x P.sub.x was from 3.times.10.sup.16 to 2.times.10.sup.17 /cm.sup.3.
According to the present invention, the carrier concentration is reduced lower than the conventional concentration and the luminance of LED is increased approximately two or three times the conventional luminance.
REFERENCES:
patent: 3617820 (1971-11-01), Herzog
patent: 3687744 (1972-08-01), Ogirima et al.
patent: 3745423 (1973-07-01), Kasano
patent: 3873382 (1975-03-01), Groves et al.
patent: 4001056 (1977-01-01), Groves et al.
patent: 4154630 (1979-05-01), Diguet et al.
Herzog et al., "Electroluminescence . . . GaAeP . . . Low Donor Concentration" J. Applied Phys., vol. 40, No. 4, Mar. 1969, pp. 1830-1838.
Dierschke et al., "Effect of Donor Concentration . . . GaP . . ."
Ibid, vol. 41, No. 1, Jan. 1970, pp. 321-328.
Blakeslee et al., "Reducing Resistance in . . . GaAeP" I.B.M. Tech. Discl. Bull., vol. 15, No. 4, Sep. 1972, p. 1284.
Stewart, C. E., "Some Observations . . . GaAeP Epitaxial Layers" J. Crystal Growth, vol. 8, 1971, pp. 269-275.
Fujita Hisanori
Hasegawa Shinichi
Dean R.
Mitsubishi Monsanto Chemical Co.
Saba W. G.
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