Disordered crystalline semiconductor

Details Disordered crystalline semiconductor Disordered crystalline semiconductor

1993-03-22

1994-12-13

Breneman, R. Bruce

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

437 81, 437 85, 437 95, 437 96, 437105, 437107, 437110, 437126, 437133, 437987, 148 335, H01L 2112

Patent

active

053726588

ABSTRACT:
A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure constituted by one of the indirect band structure, the direct band structure, and a combination of the indirect and the direct band structures, and consists of a plurality of semiconductor layers. The semiconductor layer is orderly arranged along its surface and disorderly arranged along its thickness direction with respect to at least one of the followings the number of atomic or molecular layers constituting the semiconductor layer, a composition of a specific molecular layer of the molecular layers, and impurity doped to the semiconductor layer.

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