Dual use of epitaxy seed crystal as tube input window and cathod

Details Dual use of epitaxy seed crystal as tube input window and cathod Dual use of epitaxy seed crystal as tube input window and cathod

1974-11-25

1976-04-20

Rutledge, L. Dewayne

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

148175, 313 94, 357 17, H01L 2136

Patent

active

039516989

ABSTRACT:
A photon sensing device utilizing a III-V negative electron affinity photthode grown on a window substrate support which simultaneously serves as a support and growth surface for the epitaxial growth of suitable cathode layers as well as the input window for the device.

REFERENCES:
patent: 3696262 (1972-10-01), Antypas
patent: 3699401 (1972-10-01), Tietjen et al.
patent: 3752713 (1973-08-01), Sakuta et al.

Affiliated with

Also associated with

Rating

Dual use of epitaxy seed crystal as tube input window and cathod does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual use of epitaxy seed crystal as tube input window and cathod, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual use of epitaxy seed crystal as tube input window and cathod will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1584668