Epitaxial silicon starting material

Details Epitaxial silicon starting material Epitaxial silicon starting material

1992-12-01

1994-03-22

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 334, 437 26, 437 77, H01L 2900

Patent

active

052960471

ABSTRACT:
A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate which eliminates stacking faults in the subsequent fabrication of a semiconductor device.

REFERENCES:
patent: 3547716 (1970-12-01), DeWitt et al.
patent: 3591430 (1971-07-01), Schlegel
patent: 3595714 (1971-07-01), Thire et al.
patent: 4151006 (1979-04-01), De Graaff et al.
patent: 4168997 (1979-09-01), Compton
patent: 4379726 (1983-04-01), Kumamaru et al.
patent: 4830973 (1989-05-01), Mastroianni
patent: 4936928 (1990-06-01), Shaw et al.
patent: 5034337 (1991-07-01), Mosher et al.

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