Epitaxial wafer of gallium arsenide phosphide

Details Epitaxial wafer of gallium arsenide phosphide Epitaxial wafer of gallium arsenide phosphide

1993-06-07

1995-10-10

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

148 334, 148DIG97, 437127, 437976, H01L 3300

Patent

active

054567653

ABSTRACT:
A mixed crystal ratio difference is introduced in a gallium arsenide phosphide mixed crystal layer having a desired constant mixed crystal ratio, thereby reducing the amount of stress remaining within the resulting epitaxial wafer. This is less likely or unlikely to crack, and so can be well used for LED fabrication.

REFERENCES:
patent: 4252576 (1981-02-01), Hasegawa et al.
patent: 4378259 (1983-03-01), Hasegawa et al.
patent: 4789421 (1988-12-01), Umeno et al.
patent: 4865655 (1989-09-01), Fujita et al.
patent: 4968642 (1990-11-01), Fujita et al.
patent: 5057442 (1991-10-01), Haluka

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