Etch control seal for dissolved wafer micromachining process

Details Etch control seal for dissolved wafer micromachining process Etch control seal for dissolved wafer micromachining process

1994-04-19

1995-08-01

Fourson, George

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

437974, 216 2, 216 34, H01L 21302

Patent

active

054377390

ABSTRACT:
A dissolved wafer micromachining process is modified by providing an etch control seal around the perimeter of a heavily doped micromechanical structure formed on a substrate. The micromechanical structure is fabricated on a wafer using conventional methods including the formation of a trench that surrounds and defines the shape of the micromechanical structure in the substrate. The etch control seal comprises a portion of the substrate in the form of a raised ring extending around the perimeter of the micromechanical structure and its defining trench. Selected raised areas of the heavily doped micromechanical structure and the top of the raised etch control seal are bonded to a second substrate. A selective etch is then used to dissolve the first substrate so that the heavily doped micromechanical structure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the micromechanical structure and bonded areas to the etch by preventing the etch from contacting the heavily doped structure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the substrate dissolution step, thus minimizing exposure of the micromechanical structure and bonded areas to the damaging effects of the etch. Use of an etch control seal increases design flexibility and improves micromechanical device yield and quality in a dissolved wafer fabrication process.

REFERENCES:
patent: 4465549 (1984-08-01), Ritzman
patent: 4523964 (1985-06-01), Wilner et al.
Bernstein et al., "A Micromachined Comb-Drive Tuning Fork Rate Gyroscope," IEEE Proceedings on Micro Electro Mechanical Systems, pp. 143-148, Feb. 7, 1993.

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