Electrically insulated silicon structure and producing method th

Details Electrically insulated silicon structure and producing method th Electrically insulated silicon structure and producing method th

1993-03-12

1995-04-11

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

437 62, 437 63, 437 67, 437 68, H01L 2930

Patent

active

054054540

ABSTRACT:
A silicon substrate comprises, at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

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