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Technique for the growth of planar semi-polar gallium nitride

Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate

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Thermally annealed wafers having improved internal gettering

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Thin film single crystal diamond substrate

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent

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Three dimensional integrated device

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Reexamination Certificate

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Three dimensional semiconductor on insulator substrate

Metal treatment – Barrier layer stock material – p-n type
Patent

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