Epitaxially grown compound-semiconductor crystal

Details Epitaxially grown compound-semiconductor crystal Epitaxially grown compound-semiconductor crystal

1992-04-29

1994-07-26

Thomas, Tom

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148 331, 148 333, 437 81, 437 82, 437126, 437131, H01L 2936

Patent

active

053324510

ABSTRACT:
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.

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patent: 5010381 (1991-04-01), Shiba
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