Etch control seal for dissolved wafer process

Details Etch control seal for dissolved wafer process Etch control seal for dissolved wafer process

1995-05-02

1996-04-23

Fourson, George

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

216 2, 216 99, 437974, 148DIG12, H01L 2912

Patent

active

055099742

ABSTRACT:
A dissolved wafer process is modified by providing an etch control seal around the perimeter of an etch resistant microstructure, such as a micromechanical or microelectromechanical device, formed on a first substrate. The microstructure is defined and shaped by a surrounding trench in the first substrate. Selected areas of the microstructure and the first substrate are bonded to an etch resistant second substrate. The selected bonding areas may comprise raised areas of the first substrate, or raised areas of the second substrate corresponding to the selected bonding areas of the first substrate. A bonded area forming a ring extending around the perimeter of the microstructure and its defining trench forms an etch control seal. The first substrate of the bonded assembly is dissolved in a selective etch so that the etch resistant microstructure remains attached to the second substrate only at the bonded areas. The etch control seal reduces exposure of the microstructure to the etch by preventing the etch from contacting the microstructure until the etch leaks through the dissolving floor of the trench. This occurs only during the final stages of the wafer dissolution step, thus minimizing exposure of the microstructure to the damaging effects of the etch.

REFERENCES:
patent: 4465549 (1984-08-01), Ritzman
patent: 4523964 (1985-06-01), Wilner et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
Bernstein et al, "A Micromachined Comb-Drive Tuning Fork Rate Gyroscope", IEEE Proceedings on Micro Electro Mechanical Systems, pp. 148-148, Feb. 7, 1993.

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