LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

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Method for forming crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming crystal and crystal article

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming crystal and crystal article obtained by said

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming crystal and crystal article obtained by said

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming crystal article

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Patent

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Method for forming crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Patent

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Method for forming diamond and apparatus for forming the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state

Patent

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Method for forming diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming double density wordline

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Method for forming hemispherical grained silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming oxide thin film and the treatment of silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Patent

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Method for forming pure group III-V compound semi-conductor film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming semiconductor thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Patent

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Method for forming silicon film and silicon film forming apparat

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth

Patent

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Method for forming single silicon crystals using nucleation site

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Patent

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Method for forming single sin layer as passivation film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming SOI structure

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patent

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Method for forming SOI structure

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Patent

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Method for forming suspended microstructures

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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Method for growing a CdTe layer on a Si substrate by a molecular

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

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