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BaF.sub.2 /GaAs electronic components

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Barium doping of molten silicon for use in crystal growing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Barium doping of molten silicon for use in crystal growing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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BaTiO 3 —PbTiO 3 series single crystal and method of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
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BaTiO3-PbTiO3 series single crystal and method of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
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Beads of a polycrystalline alkali-metal or alkaline-earth...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Beads of polycrystalline alkali-metal or alkaline-earth...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state
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Binary and ternary crystal purification and growth method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Biopolymer crystal mounting device and manufacturing method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
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Body having a smooth diamond layer, device and method therefor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Bonded, walk-off compensated optical elements

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
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Boron-containing organic group-V compounds useful for gas phase

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Bulk monocrystalline gallium nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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Bulk single crystal gallium nitride and method of making same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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