Method for forming semiconductor thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

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117930, 437108, 437109, H01L 2120

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054958245

ABSTRACT:
A method of forming a semiconductor thin film by crystallizing a thin film crystal from an amorphous thin film. A plurality of small regions which are preferentially made nuclei generation points are formed at predetermined positions in the amorphous thin film. Solid phase growth from single nuclei formed in the small regions is preferentially effected by heating to form a crystalline semiconductor thin film in which the grain boundary positions are adjusted to the desired positions. This crystalline semiconductor thin film is subjected to a heat treatment to reduce defects in crystal grains.

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P. Kwizera, et al "Solid Phase Epitaxial Recrystallization of Thin Polysilicon Films Amorphized by Silicon Ion Implantation" Appl. Phys Lett 41(4) 15 Aug. 1982, pp. 379-381.
E. Murakami, et al "Crystal Defect Study of Solid Phase Epitaxially Grown Si Surrounded by SiO.sub.2 Structures" Extend. Abs. of 20th (1988 Int.) Conf on Solid State Devices and Materials Tokyo (1988) pp. 185-188.
Noguchi, et al "Polysilicon Super Thin Film-Transistor Technology" Mat. Res. Soc. Symp. Proc. vol. 106 (1988) MRS pp. 293-304.
S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era Volume 1: Process Technology, Lattice Press, Sunset Beach, CA (1986) pp. 175-176.

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