Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1994-12-01
1996-03-05
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117930, 437108, 437109, H01L 2120
Patent
active
054958245
ABSTRACT:
A method of forming a semiconductor thin film by crystallizing a thin film crystal from an amorphous thin film. A plurality of small regions which are preferentially made nuclei generation points are formed at predetermined positions in the amorphous thin film. Solid phase growth from single nuclei formed in the small regions is preferentially effected by heating to form a crystalline semiconductor thin film in which the grain boundary positions are adjusted to the desired positions. This crystalline semiconductor thin film is subjected to a heat treatment to reduce defects in crystal grains.
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Osada Yoshiyuki
Yonehara Takao
Breneman R. Bruce
Canon Kabushiki Kaisha
Fleck Linda J.
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