Method for forming single sin layer as passivation film

Details Method for forming single sin layer as passivation film Method for forming single sin layer as passivation film

1996-12-31

1998-08-04

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117108, 117103, 117905, 117952, 438724, 438744, C30B 2308

Patent

active

057887675

ABSTRACT:
The present invention is a method for using a single SiN layer as a passivation film. The single layer SiN can be strengthened to withstand stress by adjusting the process parameters during formation of the SiN layer. In general, the process can be changed by increasing the low frequency power 5% during the deposition. Alternatively, the pressure of the SiN deposition may be decreased about 20% in pressure.

REFERENCES:
patent: 4854263 (1989-08-01), Chang
patent: 5433823 (1995-07-01), Cain

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