Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-05-19
1995-06-13
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 90, 117 95, 117 96, 117106, C30B 2504
Patent
active
054232864
ABSTRACT:
A method for forming a crystal comprises applying a crystal growth treatment to a substrate comprising:
REFERENCES:
patent: 3585088 (1971-06-01), Schwattke et al.
patent: 3620833 (1971-11-01), Gleim et al.
patent: 4333792 (1982-06-01), Smith
patent: 4371421 (1983-02-01), Fan et al.
patent: 4383883 (1983-05-01), Mitutani
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4670088 (1987-05-01), Tsaur et al.
patent: 4749660 (1988-06-01), Short et al.
patent: 4800527 (1989-01-01), Ozaki et al.
T. Yonehara, et al., Applied Physics Letters, vol. 52, No. 15 (Apr. 11, 1988) pp. 1231-1233.
H. I. Smith, et al., Applied Physics Letters vol. 32, No. 6 (Mar. 15, 1978) pp. 349-350.
T. Yonehara, et al., Applies Physics Letters, vol. 45, No. 6 (Sep. 15, 1984) pp. 631-632.
M. W. Geis, et al., Applied Physics Letters, vol. 35, No. 1 (Jul. 1, 1979) pp. 71-74.
D. A. Porter, et al., "Phase Transformations in Metals and Alloys, " Van Nostrond (International), Wokingham, GB (1981) pp. 193-194.
M. C. Flemmings, "Solidification Processing, " McGraw-Hill, New York (1974) pp. 290-327.
Canon Kabushiki Kaisha
Kunemund Robert
LandOfFree
Method for forming crystal and crystal article does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming crystal and crystal article, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming crystal and crystal article will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1303338