Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-05-30
1997-08-05
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 95, 117 96, 117 97, 117935, 438479, 438974, C30B 2504
Patent
active
056538022
ABSTRACT:
A method for forming a crystal comprises implanting ions on the surface of a substrate to change the ion concentration in the depth direction of said substrate surface by said ion implantation, subjecting a desired position of said substrate surface with a sufficient area for crystal growth from a single crystal to exposure treatment to/he depth where an exposed surface having larger nucleation density than the nucleation density of the surface of said substrate is exposed, thereby forming a nucleation surface comprising said exposed surface exposed by said exposure treatment and a nonnucleation surface comprising the surface of the substrate remaining without subjected to said exposure treatment, applying a crystal growth treatment for crystal growth from a single nucleus on said substrate to grow a single crystal from said single nucleus or form a polycrystal of a mass of single crystals grown from said single nucleus.
REFERENCES:
patent: 3620833 (1971-11-01), Gleim et al.
patent: 4021675 (1977-05-01), Shifrin
patent: 4249962 (1981-02-01), Celler
patent: 4800527 (1989-01-01), Ozaki et al.
Jastrzebski et al. "Growth Process of Silicon Over SiO.sub.2 by CVD: Elo" Journal Electrochem. Soc. Jul. 1983 pp. 1571-1579 vol. 130 No. 7.
Canon Kabushiki Kaisha
Kunemund Robert
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