4. Single-crystal, oriented-crystal, and epitaxy growth processes;
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Ultra-high vacuum/chemical vapor deposition of epitaxial silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

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Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) met

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Ultrafine particles and production method thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Organic product
Patent

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Ultraviolet light-emitting device in which p-type...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Uniaxial thin film structures formed from oriented bilayers and

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
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Use of thin SOI to inhibit relaxation of SiGe layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate

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Utilization of miscut substrates to improve relaxed graded silic

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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