Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-12-22
1996-11-12
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 1, 117 84, C30B 2520
Patent
active
055735924
ABSTRACT:
This invention discloses a method of synthesizing a Group III-V compound semi-conducting film from a Group III metal alkyl and Group V hydride wherein the method comprises providing a vacuum chamber in which the synthesis takes place, adsorbing at least one monolayer of said Group III metal alkyl on an inert surface, backfilling the chamber with a Group V hydride, adsorbing the Group V hydride on the inert surface, providing atomic hydrogen atoms from electron-induced dissociation of Group V hydride adsorbed on the surface, inducing an electron-induced depletion of carbon at a rate which is dependent on the pressure of the Groups V hydride, retaining substantially all Group III metal on the surface and providing a thermally stable Group III-V compound semi-conducting film on the inert SiO.sub.2 surface. Methods for synthesizing a multilayer Group III-V semi-conducting film and specifically a GaN film are also disclosed, along with the apparatus for the synthesis of Group III-V compound semi-conducting films.
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Choyke W. J.
H ubner Andreas
Lucas Scott R.
Partlow William D.
Sch afer J. A.
Appleman Jolene W.
Garrett Felisa
Kunemund Robert
Silverman Arnold B.
University of Pittsburgh of the Commonwealth system of Higher Ed
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