Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-10-18
1995-12-05
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 90, 437 89, C30B 2504
Patent
active
054719445
ABSTRACT:
A method for forming a crystal article comprises forming a plurality of monocrystals with a desired size at a desired position on a substrate comprising an amorphous insulating material and having a non-nucleation surface by crystal forming treatment, wherein prior to the crystal forming treatment a plurality of concavities with a desired size and form are formed respectively in a region to be covered with a single monocrystal on the substrate, and a single monocrystal is formed to full the plurality of concavities by the crystal forming treatment and thereafter the monocrystal is flattened by removing it to the same level as the upper surface of the substrate.
REFERENCES:
patent: 4383883 (1983-05-01), Mitzutani
patent: 4450041 (1984-05-01), Aklufi
patent: 4929566 (1990-05-01), Beitman
Breneman R. Bruce
Canon Kabushiki Kaisha
Garrett Felisa
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