Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1993-08-02
1994-11-15
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117902, C30B 2502
Patent
active
053637933
ABSTRACT:
A method of forming crystals is adapted to grow a single-crystal by subjecting a substrate having a free surface with mutually adjacent non-nucleation and nucleation surfaces to a crystal forming process. Each nucleation surface consists of an amorphous material, having a greater nucleation density than the non-nucleation surface, with respect to a material with which the single-crystal will be formed, and having an area sufficiently small to permit only one nucleus to be generated, which will grow into the single crystal. The non-nucleation surfaces are made of a material having a higher etching rate than the material of which the nucleation surfaces are made. After a process of implanting ions in the entire surface of the substrate, the resultant substrate is subjected to an etching process whereby the non-nucleation surface material alone is selectively etched to remove the unnecessarily ion-implanted portions of the material. Thus, in the ion implantation, which is performed without employing a resist and followed by selective etching, a great amount of ions can be implanted without involving the conventional problems and without complicating the method. Therefore, it is possible to achieve a sufficiently great difference in nucleation density between the nucleation and non-nucleation surfaces, thereby increasing the yield of crystal growth.
REFERENCES:
patent: 3620833 (1971-11-01), Gheim
Breneman R. Bruce
Canon Kabushiki Kaisha
Garrett Felisa
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