Method for forming double density wordline

Details Method for forming double density wordline Method for forming double density wordline

2005-09-13

2005-09-13

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S002000, C117S003000, C117S089000, C117S094000, C117S095000

Reexamination Certificate

active

06942732

ABSTRACT:
A method for forming a double density wordline. A semiconductor substrate having a poly layer, a first insulating layer, a first dummy poly layer, and a second insulating layer is provided. The second insulating layer and the first dummy poly layer separated by an opening are a first wordline mask and a second wordline mask respectively. A spacer is formed on a sidewall of the opening, and the opening is filled with a second dummy poly layer. The spacer, the second insulating layer, and the exposed first insulating layer are removed to form a third wordline mask, the third wordline is composed of the second dummy poly layer and the unexposed first insulating layer. The poly layer is etched to form a first wordline, a second wordline, and a third wordline using the first wordline mask, the second wordline mask, and the third wordline mask as etching masks.

REFERENCES:
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin

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