Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-06-06
1998-12-29
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 90, 117 95, 117106, C30B 2518
Patent
active
058534784
ABSTRACT:
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
REFERENCES:
patent: 3346414 (1967-10-01), Ellis et al.
patent: 3493431 (1970-02-01), Wagner
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 3620833 (1971-11-01), Gleim et al.
patent: 3892608 (1975-07-01), Kuhn
patent: 4174422 (1979-11-01), Matthews et al.
patent: 4402771 (1983-09-01), Thomas
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4490208 (1984-12-01), Tanaka et al.
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4670086 (1987-06-01), Leamy
patent: 4671970 (1987-06-01), Keiser et al.
Gibbons, et al. "CW Laser Recrystallization of 21007S; on Amorphous Substrates", Applied Physics Letters, 34(12) Jun. 15, 1979 pp. 831-832.
Claassen et al. "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates" Journal of Electrochemical Society, Jan. 1980 pp. 194-202.
Jastrezebski, "SOI By CVD: Epitaxial Lateral Overgrowth (ELO) Process," Journal of Crystal Growth vol. 63 (1983) pp. 493-526.
Matthews, "Epitaxial Growth Part A," Academic Press, N.Y. 1975 pp. 315-324.
Brice, "Crystal Growth Process", John Wiley and Sons, N.Y. Blackie Publishing 1986 p. 75.
P. Dobbert, et al., "Struktur auf Musakovit Aufgedampfter Kadmiumschichten" Kristall und Technik, vol. 8., No. 7, 1973, pp. 853-857.
W.A.P. Claassen et al., "The Nucleartion of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates, II The SiH.sub.2 Cl.sub.2 -H.sub.2 -N.sub.2 System,".
W.A.P. Claassen et al., "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates, III The SiH.sub.4 -HCl-H.sub.2 System at Low Temperatures,".
J.W. Matthews, "Epitaxial Growth" Part A, pp. 12, 21, 413 and 428 (1975).
John H. Perry, "Chemical Engineer's Handbook", 4th Ed., McGraw-Hill Book Company, 1963, pp. (8-2) and (8-7).
Dictionary of Scientific and Technical Terms, 4th Ed., McGraw-Hill.
Naruse Yasuhiro
Yonehara Takao
Canon Kabushiki Kaisha
Kunemund Robert
LandOfFree
Method for forming crystal and crystal article obtained by said does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming crystal and crystal article obtained by said , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming crystal and crystal article obtained by said will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1420051