Method for forming silicon film and silicon film forming apparat

Details Method for forming silicon film and silicon film forming apparat Method for forming silicon film and silicon film forming apparat

1995-10-17

1998-06-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 68, 117 88, 117206, 117931, C30B 2306

Patent

active

057663424

ABSTRACT:
The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.

REFERENCES:
patent: 4479847 (1984-10-01), McCaldin et al.
patent: 4624859 (1986-11-01), Akira et al.
patent: 4894352 (1990-01-01), Lane et al.
Frieser, "Low Temperature Silicon Epitaxy," Research & Development Labs., pp. 401-405, vol. 115, No. 4, J. Electrochem. Soc. : Solid State Science.
Kylkov, "Diataxial Growth of Siliocn and Germanium", Journal of Crystal Growth, vol. 52 pp. 687-691, 1981.

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