Method for forming SOI structure

Details Method for forming SOI structure Method for forming SOI structure

1993-07-29

1995-05-23

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 45, 437 89, C30B 100

Patent

active

054171806

ABSTRACT:
An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acting as insulating layer. The silicon dioxide layer (4) is then provided with an opening (10) by etching with the aid of resist (6). After removing the resist (6), a silicon seed crystal layer (11) is selectively grown in the opening (10). Next, the silicon dioxide layer (4) is subjected to etchback using hydrofluoric acid, so that the side face (14) of the seed crystal layer (11) is emerged. The following epitaxial growth on the basis of the seed crystal layer (11) is allowed sufficient growth in the lateral direction. As a result, an epitaxially grown layer having (16) a large area and an uniform thickness is realized.

REFERENCES:
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4749441 (1988-06-01), Christensen et al.
patent: 4760036 (1988-07-01), Schubert
patent: 4988641 (1991-01-01), Solomon
patent: 5296086 (1994-03-01), Takasu
patent: 5308445 (1994-05-01), Takasu

Affiliated with

Also associated with

Rating

Method for forming SOI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming SOI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming SOI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134210