Method for forming SOI structure

Details Method for forming SOI structure Method for forming SOI structure

1996-10-16

1999-09-07

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117 97, 117913, 117935, 148 333, C30B 2504

Patent

active

059481625

ABSTRACT:
An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acting as insulating layer. The silicon dioxide layer (4) is then provided with an opening (10) by etching with the aid of resist (6). After removing the resist (6), a silicon seed crystal layer (11) is selectively grown in the opening (10). Next, the silicon dioxide layer (4) is subjected to etchback using hydrofluoric acid, so that the side face (14) of the seed crystal layer (11) is emerged. The following epitaxial growth on the basis of the seed crystal layer (11) is allowed sufficient growth in the lateral direction. As a result, an epitaxially grown layer having (16) a large area and an uniform thickness is realized.

REFERENCES:
patent: 3502515 (1970-03-01), McMullen et al.
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4749441 (1988-06-01), Christenson et al.
patent: 5269876 (1993-12-01), Mitzutani
patent: 5653802 (1997-08-01), Yamagata

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