Method for forming diamond film

Details Method for forming diamond film Method for forming diamond film

1995-07-14

1998-02-24

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117929, 423446, 427577, C30B 2902

Patent

active

057208085

ABSTRACT:
In a method for forming a diamond film by a high-frequency plasma CVD method, an inductive coupling discharge is used and the frequency of a high-frequency wave is set in the range of from 40 to 250 MHz, whereby a starting gas containing carbon is decomposed in a plasma state and a diamond film is formed on a substrate.

REFERENCES:
patent: 4898748 (1990-02-01), Kruger
patent: 5053243 (1991-10-01), Schuurmans et al.
patent: 5087434 (1992-02-01), Frenklach et al.
patent: 5349154 (1994-09-01), Harker et al.
patent: 5380516 (1995-01-01), Keiichiro et al.
patent: 5418018 (1995-05-01), Rudder et al.
Patent Abstracts of Japan, vol. 017 No. 321 (C-1072), Jun. 18, 1993.
Meyer, D.E., et al "R.F. Plasma CVD Of Diamond From H.sub.2 /CH.sub.4, H.sub.2 /CO And H.sub.4 /CH.sub.1 /O.sub.2 Source Gases", Extended Abstracts, Spring Meeting, Los Angeles, CA., vol. 89/1, May 7, 1989.
Suzuki, J., et al. "The Synthesis of Diamond Films At Lower Pressure And Lower Temperature Using Magneto-Microwave Plasma CVD", Japanese Journal of Applied Physics, Part 2 (Letters), Feb. 1989, Japan, vol. 28, No. 2, pp. L281-L283.

Affiliated with

Also associated with

Rating

Method for forming diamond film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming diamond film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming diamond film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1872534