Method for growing a CdTe layer on a Si substrate by a molecular

Details Method for growing a CdTe layer on a Si substrate by a molecular Method for growing a CdTe layer on a Si substrate by a molecular

1995-10-03

1998-06-02

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117 84, 117108, 117954, 438761, 438763, C30B 2518

Patent

active

057592667

ABSTRACT:
In a method for growing a CdTe layer on a clean surface of a Si substrate, the clean surface of the Si substrate is subjected to an irradiation of As at a temperature in the range of about 650.degree. C. to about 800.degree. C. so that Si atoms on terrace of the clean surface are replaced by As atoms, followed by carrying out a molecular beam epitaxy to grow a CdTe layer on the surface. It is preferable that the clean surface is subjected to an irradiation of Cd in addition to the irradiation of As.

REFERENCES:
patent: 5229333 (1993-07-01), Cho et al.
patent: 5382542 (1995-01-01), Zinck et al.
patent: 5394826 (1995-03-01), Ebe et al.
patent: 5399206 (1995-03-01), De Lyon

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